Sign In | Join Free | My bushorchimp.com
China Sanhuang electronics (Hong Kong) Co., Limited logo
Sanhuang electronics (Hong Kong) Co., Limited
Sanhuang Electronics (Hong Kong) Co., Limite
Verified Supplier

3 Years

Home > Flash Memory IC >

70V657S10BFG IC SRAM 1.125MBIT PAR 208FPBGA Renesas Electronics America Inc

Sanhuang electronics (Hong Kong) Co., Limited
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

70V657S10BFG IC SRAM 1.125MBIT PAR 208FPBGA Renesas Electronics America Inc

Brand Name : Renesas Electronics America Inc

Model Number : 70V657S10BFG

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : SRAM

Technology : SRAM - Dual Port, Asynchronous

Memory Size : 1.125Mbit

Memory Organization : 32K x 36

Memory Interface : Parallel

Clock Frequency : -

Write Cycle Time - Word, Page : 10ns

Access Time : 10 ns

Voltage - Supply : 3.15V ~ 3.45V

Operating Temperature : 0°C ~ 70°C (TA)

Mounting Type : Surface Mount

Package / Case : 208-LFBGA

Supplier Device Package : 208-CABGA (15x15)

Contact Now

Product Details

Description

The IDT70V659/58/57 is a high-speed 128/64/32K x 36 Asynchronous Dual-Port Static RAM. The IDT70V659/58/57 is designed to be used as a stand-alone 4/2/1Mbit Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTERSLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.

Features

◆ True Dual-Port memory cells which allow simultaneous access of the same memory location
◆ High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12/15ns (max.)
◆ Dual chip enables allow for depth expansion without external logic
◆ IDT70V659/58/57 easily expands data bus width to 72 bits or more using the Master/Slave select when cascading more than one device
◆ M/S = VIH for BUSY output flag on Master, M/S = VIL for BUSY input on Slave
◆ Busy and Interrupt Flags
◆ On-chip port arbitration logic
◆ Full on-chip hardware support of semaphore signaling between ports
◆ Fully asynchronous operation from either port
◆ Separate byte controls for multiplexed bus and bus matching compatibility
◆ Supports JTAG features compliant to IEEE 1149.1
◆ LVTTL-compatible, single 3.3V (±150mV) power supply for core
◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port
◆ Available in a 208-pin Plastic Quad Flatpack, 208-ball fine pitch Ball Grid Array, and 256-ball Ball Grid Array
◆ Industrial temperature range (–40°C to +85°C) is available for selected speeds

Specifications

Attribute Attribute Value
Manufacturer Integrated Circuit Systems
Product Category Memory ICs
Series -
Packaging Tray Alternate Packaging
Package-Case 208-LFBGA
Operating-Temperature 0°C ~ 70°C (TA)
Interface Parallel
Voltage-Supply 3.15 V ~ 3.45 V
Supplier-Device-Package 208-CABGA (15x15)
Memory Capacity 1.125M (32K x 36)
Memory-Type SRAM - Dual Port, Asynchronous
Speed 10ns
Format-Memory RAM
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part# Description Manufacturer Compare
IDT70V657S10BFG
Memory
Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208 Integrated Device Technology Inc 70V657S10BFG vs IDT70V657S10BFG
70V657S10BFG8
Memory
CABGA-208, Reel Integrated Device Technology Inc 70V657S10BFG vs 70V657S10BFG8
IDT70V657S10BFG8
Memory
Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208 Integrated Device Technology Inc 70V657S10BFG vs IDT70V657S10BFG8
70V657S10BC
Memory
CABGA-256, Tray Integrated Device Technology Inc 70V657S10BFG vs 70V657S10BC
IDT70V657S10DRG
Memory
Dual-Port SRAM, 32KX36, 10ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, GREEN, PLASTIC, QFP-208 Integrated Device Technology Inc 70V657S10BFG vs IDT70V657S10DRG
IDT70V657S10BCG
Memory
Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256 Integrated Device Technology Inc 70V657S10BFG vs IDT70V657S10BCG
70V657S10BCG
Memory
CABGA-256, Tray Integrated Device Technology Inc 70V657S10BFG vs 70V657S10BCG
IDT70V657S10BC
Memory
Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 Integrated Device Technology Inc 70V657S10BFG vs IDT70V657S10BC
70V657S10DRG
Memory
PQFP-208, Tray Integrated Device Technology Inc 70V657S10BFG vs 70V657S10DRG
70V657S10BCG8
Memory
Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 Integrated Device Technology Inc 70V657S10BFG vs 70V657S10BCG8

Descriptions

SRAM - Dual Port, Asynchronous Memory IC 1.125Mb (32K x 36) Parallel 10ns 208-FPBGA (15x15)
SRAM 32Kx36 STD-PWR, 3.3V DUAL-PORT RAM

Buy cheap 70V657S10BFG IC SRAM 1.125MBIT PAR 208FPBGA Renesas Electronics America Inc product

70V657S10BFG IC SRAM 1.125MBIT PAR 208FPBGA Renesas Electronics America Inc Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Sanhuang electronics (Hong Kong) Co., Limited
*Subject:
*Message:
Characters Remaining: (0/3000)